29 silicon pnp epitaxial planar transistor (complement to type 2sc4468) application : audio and general purpose symbol v cbo v ceo v ebo i c i b p c tj t stg 2sA1695 ?40 ?40 ? ?0 ? 100(tc=25?) 150 ?5 to +150 unit v v v a a w ? ? n absolute maximum ratings n electrical characteristics symbol i cbo i ebo v (br)ceo h fe v ce (sat) f t c ob 2sA1695 ?0 max ?0 max ?40 min 50 min * ?.5 max 20 typ 400 typ unit m a m a v v mhz pf conditions v cb =?40v v eb =?v i c =?0ma v ce =?v, i c =?a i c =?a, i b =?.5a v ce =?2v, i e =0.5a v cb =?0v, f=1mhz 2sA1695 (ta=25?) (ta=25?) i c v ce characteristics (typical) h fe i c characteristics (typical) safe operating area (single pulse) h fe i c temperature characteristics (typical) i c v be temperature characteristics (typical) v ce (sat) i b characteristics (typical) pc ta derating 0 0 ? ? ? ? ?0 ? ? ? ? collector-emitter voltage v ce (v) collector current i c (a) ?00ma ?5ma i b =?0ma ?00ma ?00ma ?50ma ?00ma ?5ma ?0ma 0 ? ? ? 0 ?.0 ?.5 ?.5 ?.0 base current i b (a) collector-emitter saturation voltage v ce(sat) (v) i c =?0a ?a 0 ?0 ? ? ? ? 0 ?.5 ? base-emittor voltage v be (v) collector current i c (a) (v ce =?v) 125?c (case temp) 25?c (case temp) ?0?c (case temp) ?.02 ?.1 ? ? ?.5 ?0 30 50 100 200 collector current i c (a) dc current gain h fe (v ce =?v) typ ?0 ? ? ?00 ?00 ?0 ?.1 ? ?.5 ?0 ?0 ? collector-emitter voltage v ce (v) collector current i c (a) without heatsink natural cooling dc 100ms 3ms 10ms 0.02 0.1 1 10 0 10 30 20 cut-off frequency f t (mh z ) (v ce =?2v) emitter current i e (a) typ f t i e characteristics (typical) 100 50 3.5 0 0 25 50 75 100 125 150 ambient temperature ta(?c) maximum power dissipation p c (w) with infinite heatsink without heatsink (v ce =?v) ?.02 ?.1 ?.5 ? ? ?0 30 50 100 200 collector current i c (a) dc current gain h fe 125?c 25?c ?0?c q j-a e t characteristics 0.1 1 3 0.5 1 10 100 1000 2000 time t(ms) transient thermal resistance q j-a (?c/w) external dimensions mt-100(to3p) 15.6 ?.4 9.6 19.9 ?.3 4.0 2.0 5.0 ?.2 1.8 ?.2 ?.1 2 3 1.05 +0.2 -0.1 20.0min 4.0max be 5.45 ?.1 5.45 ?.1 c 4.8 ?.2 0.65 +0.2 -0.1 1.4 2.0 ?.1 a b weight : approx 6.0g a. type no. b. lot no. n typical switching characteristics (common emitter) v cc (v) ?0 r l ( ) 12 i c (a) ? v bb2 (v) 5 i b2 (a) 0.5 t on ( m s) 0.17typ t stg ( m s) 1.86typ t f ( m s) 0.27typ i b1 (a) ?.5 v bb1 (v) ?0 * h fe rank o(50 to 100), p(70 to 140), y(90 to 180)
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